Title :
Advanced chemical mechanical planarization (CMP) process for copper interconnects
Author_Institution :
Hosei Univ., Tokyo, Japan
Abstract :
Chemical mechanical planarization (CMP) of copper dual Damascene is described. Dishing of the copper layer can be controlled by the CMP employing non-abrasive MnO2 slurry. Removal rate ratio of the Cu/barrier layer can be reduced from 2.8 to unity with doping of antioxide additive in the slurry. Dishing still appears at the rate of 2.8 and dishing free CMP can be attained at unit. Scratches are formed in this CMP
Keywords :
chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit metallisation; CMP; Cu; Cu dual Damascene; Cu interconnects; antioxide additive doping; chemical mechanical planarization; dishing; nonabrasive MnO2 slurry; removal rate ratio; scratches; Copper; Doping; Grain boundaries; Integrated circuit interconnections; Large scale integration; Manufacturing; Planarization; Slurries; Sputtering; Tin;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981501
