Title :
High Speed Modulator in Q-band Range on 4H-SiC p-i-n Diodes
Author :
Kakanakov, R.D. ; Kolaklieva, L.P. ; Romanov, L.P. ; Kirillov, A.V. ; Lebedev, A.A. ; Boltovets, M.S. ; Zekentes, K.
Author_Institution :
Inst. of Appl. Phys., Bulgarian Acad. of Sci., Plovdiv
Abstract :
4H-SiC p-i-n diodes with very good switching characteristics have been developed and used in high speed modulator in the Q-band range. The diode has a voltage drop at forward direction as low as 3.4 V at current density of 100 A/cm2. Leakage currents less than 1 muA are measured at reverse voltages of 1200 V and 1700 V in air and a SF6 atmosphere, respectively. The operating speed of the modulator is 5-7 ns which make it very perspective for applications in Q-band range. In the frequency range of 26-38 GHz, the modulator has insertion losses not more than 2 dB and isolation losses not less than 20 dB
Keywords :
leakage currents; microwave circuits; microwave diodes; modulators; p-i-n diodes; silicon compounds; wide band gap semiconductors; 1200 to 1700 V; 26 to 38 GHz; 3.4 V; 5 to 7 ns; SiC; leakage currents; microwave modulators; p-i-n diodes; voltage drop; Atmosphere; Atmospheric measurements; Current density; Current measurement; Frequency; Insertion loss; Leakage current; P-i-n diodes; Sulfur hexafluoride; Voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650950
