Title :
Low-Frequency-Noise Characteristic of Quasi-Enhancement-Mode HEMT Using a Selectively Hydrogen-Pretreatment
Author :
Kang, I.H. ; Kim, S.C. ; Bahng, W. ; Kim, N.K.
Author_Institution :
Power Semicond. Res. Group, Korea Electrotechnol. Res. Inst., Gyeongsangnam-do
Abstract :
The DC, RF, and low-frequency noise characteristics were investigated for a quasi-enhancement-mode (QE) HEMT using a selective hydrogen pretreatment (SHP). The QE-HEMT with SHP showed a large shift in threshold voltage without severe degradation of RF performances including cut-off frequency and maximum oscillation frequency, compared with those of HEMT without SHP. Moreover, the QE HEMT exhibited a reduction of low-frequency noise bulges compared with those of depletion-mode HEMT without an SHP, leading to an one-order smaller input noise spectral density at 100Hz, and offered a potential for application to a low phase noise oscillator
Keywords :
high electron mobility transistors; hydrogen; passivation; phase noise; semiconductor device noise; surface treatment; 100 Hz; DC noise; RF noise; high electron mobility transistors; low phase noise oscillator; low-frequency noise; oscillation frequency; selective hydrogen pretreatment; Cutoff frequency; D-HEMTs; Degradation; HEMTs; Hydrogen; Low-frequency noise; Noise reduction; Phase noise; Radio frequency; Threshold voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650951
