Title :
Studies on size effect of copper interconnect lines
Author :
Wu, Wen ; Maex, Karen
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this paper, we present our studies on size effect of copper interconnect lines as well as PVD copper films. It was found that both the size effect and grain boundary scattering play all important role in determining the total resistivity values of copper lines and films. Fitting processes were carried out which gave simultaneously an estimation of the extent of size effect and grain boundary scattering
Keywords :
copper; electrical resistivity; grain boundaries; integrated circuit interconnections; metallic thin films; plasma CVD coatings; size effect; Cu; Cu interconnect lines; PVD Cu films; fitting processes; grain boundary scattering; resistivity values; size effect; Atherosclerosis; Conductivity; Contact resistance; Copper; Electrons; Grain boundaries; Integrated circuit interconnections; Optical films; Reflection; Scattering;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981507
