Title :
Minimize dishing effects during chemical mechanical planarization of copper damascene structures
Author :
Guohai, Zhang ; He, Qian ; Yang, Xia ; Dexin, Wu
Author_Institution :
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Abstract :
Copper CMP is one of the key steps in the damascene process. Some experiments on of Copper CMP were done based on the homemade CMP machine and the novel FA/O Cu slurry made in China. The mechanism of Copper CMP using the novel slurry was given. The dishing effects during Cu CMP were discussed in detail. Furthermore, the dishing effect was minimized by adjusting the applied pressure
Keywords :
ULSI; chemical mechanical polishing; copper; integrated circuit interconnections; CMP; Cu; Cu damascene structures; Cu slurry; applied pressure adjustment; chemical mechanical planarization; dishing effects minimisation; Copper; Dry etching; Helium; Microelectronics; Planarization; Plasma temperature; Research and development; Silicon compounds; Slurries; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981509
