DocumentCode
2206447
Title
Minimize dishing effects during chemical mechanical planarization of copper damascene structures
Author
Guohai, Zhang ; He, Qian ; Yang, Xia ; Dexin, Wu
Author_Institution
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Volume
1
fYear
2001
fDate
2001
Firstpage
423
Abstract
Copper CMP is one of the key steps in the damascene process. Some experiments on of Copper CMP were done based on the homemade CMP machine and the novel FA/O Cu slurry made in China. The mechanism of Copper CMP using the novel slurry was given. The dishing effects during Cu CMP were discussed in detail. Furthermore, the dishing effect was minimized by adjusting the applied pressure
Keywords
ULSI; chemical mechanical polishing; copper; integrated circuit interconnections; CMP; Cu; Cu damascene structures; Cu slurry; applied pressure adjustment; chemical mechanical planarization; dishing effects minimisation; Copper; Dry etching; Helium; Microelectronics; Planarization; Plasma temperature; Research and development; Silicon compounds; Slurries; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981509
Filename
981509
Link To Document