Title :
Ultra shallow junction technology for sub-100 nm CMOS
Author_Institution :
Semicond. Co., Matsushita Electr. Ind. Co. Ltd., Japan
Abstract :
We present the technology "Quantum Leap" encompassing low energy doping processes and novel annealing technologies to be the standard technology which can achieve the ultra shallow junction with very high throughput and lower resistance. The technologies are applied to fabricate sub-100 nm CMOS
Keywords :
CMOS integrated circuits; VLSI; doping profiles; integrated circuit technology; ion implantation; laser beam annealing; rapid thermal annealing; semiconductor doping; 100 nm; Quantum Leap technology; RTA; annealing technologies; high activation technologies; high throughput; laser annealing; low energy doping processes; resistance reduction; sub-100 nm CMOS; ultra shallow junction technology; Annealing; CMOS process; CMOS technology; Chemical technology; Costs; Doping; Ion implantation; Plasma immersion ion implantation; Plasma temperature; Throughput;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981511
