Title :
Effect of Interface Microrelief on Optical, Electrical and Photoelectric Characteristics of Heteroepitaxial AlxGa1-xAs/GaAs Structures
Author :
Dmitruk, N.L. ; Borkovskaya, O.Yu. ; Konakova, R.V. ; Korovin, A.V. ; Mamontova, I.B. ; Kondratenko, O.S.
Author_Institution :
Inst. for Phys. of Semicond., National Acad. of Sci., Kyiv
Abstract :
We have investigated the dependence of optical, photoelectric and electrical characteristics of heteroepitaxial AlxGa1-x As/GaAs structures on active interface microrelief morphology. Experimental study of heterostructures included analysis of surface microrelief parameters by AFM techniques, measurements of specular and diffuse reflection spectra, the dark and light current-voltage (I-V) characteristics and spectra of the short-circuit photocurrent. Investigation showed that advantages of optical and recombination properties of an anisotropically etched GaAs surface may be remained in AlxGa1-xAs/GaAs heterostructures at a suitable choice of processing regimes. To explain reduction of the open circuit voltage (VOC) in some heterostructures with textured interface a theoretical analysis has been made for VOC dependence on the nonuniformity of doping with impurity atoms caused by interface roughness
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; etching; gallium arsenide; surface morphology; surface roughness; AlGaAs-GaAs; anisotropic etching; atomic force microscopy; diffuse reflection spectra; heteroepitaxial structures; impurity atoms; interface microrelief morphology; interface roughness; recombination properties; short-circuit photocurrent; specular reflection spectra; Anisotropic magnetoresistance; Circuits; Current measurement; Electric variables; Etching; Gallium arsenide; Geometrical optics; Optical reflection; Photoconductivity; Surface morphology;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650958
