a-Si1-xCx:H TFTs: Fabrication and Modeling

Author

Estrada, M. ; Cerdeira, A. ; García, R. ; Iniguez, B.

Author_Institution

Departmento de Ingenieria Electrica, CINVESTAV-IPN, San Pedro Zacatenco

fYear

0

fDate

0-0 0

Firstpage

307

Lastpage

312

Abstract

In this paper we resume results obtained in the fabrication and characterization of first a-Si_1-xC_x:H TFTs. The behavior with temperature of these devices was studied using a unified model and extraction parameter method, UMEM, previously developed by us and applied to amorphous, polycrystalline and nanocrystalline Si TFTs as well as to organic TFTs. The behavior and variation with temperature of the transfer and output characteristics, of mobility and saturation parameter, as well as other features of these TFTs with active layer containing both Si and C are shown and compared to those of typical a-Si:H TFTs. Localized traps density distribution and their activation energies were estimated. Instability after voltage stress is also shown. First results after polarization of the amorphous TFTs by laser annealing are presented

Keywords

amorphous semiconductors; chemical vapour deposition; laser beam annealing; semiconductor device models; silicon compounds; thin film transistors; wide band gap semiconductors; PECVD; SiC:H; amorphous semiconductors; extraction parameter method; laser annealing; mobility parameter; optoelectronic materials; saturation parameter; thin film transistors; traps density distribution; Amorphous materials; Analytical models; Annealing; Fabrication; Polymer films; Silicon carbide; Temperature; Thermal conductivity; Turning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650960

Filename

1650960