Title :
ICP dry etching for deep sub-micrometer vertical trench in Si and SiO2
Author :
Wei Ke ; Xun-Chun, Liu ; Xiao-Xu, Guo ; Wang Run-Mei ; Zhen-Ya, Cao
Author_Institution :
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Abstract :
Dry etching is a very important process in integrated circuit manufacture. Perfect results of etching a 154 nm trench in silicon and a 138 nm trench in silicon dioxide by a pagoda-shape ICP reactor are reported. A detail study of etching characteristics as function of gas composition, flow rate, RF power, pressure and self-bias voltage, is described
Keywords :
VLSI; integrated circuit technology; silicon; silicon compounds; sputter etching; 138 nm; 154 nm; DSM vertical trench; IC manufacture; ICP dry etching; RF power; Si; Si trench; SiO2; SiO2 trench; deep submicron vertical trench; etching characteristics; flow rate; gas composition; inductively coupled plasma etching; pagoda-shape ICP reactor; pressure; self-bias voltage; Argon; Coils; Dry etching; Fabrication; Plasma applications; Plasma density; Power supplies; Resists; Silicon compounds; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981516
