Title :
P-Type Conduction in Sputtered ZnO Thin Films Doped by Nitrogen
Author :
Shtereva, K. ; Tvarozek, V. ; Novotny, I. ; Kovac, J. ; Sutta, P. ; Vincze, A.
Author_Institution :
Dept. of Electron., Rousse Univ.
Abstract :
Nitrogen doped zinc oxide (ZnO:N) thin films were prepared by RF diode sputtering from ZnO target in different ratio of Ar/N2 gas mixture. The p-type features of ZnO:N thin films have been caused by the incorporation of the nitrogen acceptor NO into ZnO what was proven by second ion mass spectroscopy (SIMS) analysis. The minimum value of resistivity of 790 Omegacm, a Hall mobility of 22 cm2V-1s-1 and the carrier concentration of 3.6 times 1014 cm-3 were yielded at 75 % N 2. X-ray diffraction measurements (XRD) showed that ZnO:N films had the preferential orientation of (002) plane at 25 % N2 and of (100) plane for higher N2 concentrations. The average grain size was from 7 to 42 nm for all Ar/N2 ratios. ZnO:N films exhibit relatively high micro strains (10 times 10-3 )
Keywords :
Hall mobility; II-VI semiconductors; X-ray diffraction; argon; carrier density; gas mixtures; nitrogen; secondary ion mass spectroscopy; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; 7 to 42 nm; Hall mobility; P-type conduction; RF diode sputtering; SIMS analysis; X-ray diffraction measurements; ZnO thin films; ZnO:N; carrier concentration; gas mixture; grain size; nitrogen acceptor; second ion mass spectroscopy; zinc oxide thin films; Argon; Conductivity; Diodes; Hall effect; Mass spectroscopy; Nitrogen; Radio frequency; Sputtering; X-ray diffraction; Zinc oxide;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650966
