Reliability Issues Related to Laser-Annealed Implanted Back-Wafer Contacts in Bipolar Silicon-on-Glass Processes

Author

Lorito, G. ; Gonda, V. ; Liu, S. ; Scholtes, T.L.M. ; Schellevis, H. ; Nanver, L.K.

Author_Institution

Dept. of Microelectron., Delft Univ. of Technol.

fYear

0

fDate

0-0 0

Firstpage

342

Lastpage

345

Abstract

Silicon-on-glass vertical NPN´s and PNP´s with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the low-temperature back-wafer processing

Keywords

bipolar transistors; impact ionisation; laser beam annealing; leakage currents; semiconductor device reliability; back-wafer contacts; base-leakage currents; bipolar silicon-on-glass processes; collector contacts; impact-ionization currents; laser annealing; low-temperature back-wafer processing; silicon-on-glass vertical NPN; silicon-on-glass vertical PNP; Annealing; Contacts; Fabrication; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Surface emitting lasers; Varactors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650969

Filename

1650969