DocumentCode
2206774
Title
A Novel Bottom Gate Polysilicon Thin-Film Transistor with Smart Body Tie
Author
Lin, Jyi-Tsong ; Huang, Kuo-Dong ; Lin, Shih-Tsong
Author_Institution
Dept. of Electr. Eng., National Sun Yat-Sen Univ., Kaohsiung
fYear
0
fDate
0-0 0
Firstpage
346
Lastpage
349
Abstract
In this paper, a novel bottom gate polysilicon thin-film transistor (TFT) with smart body tie is presented. Besides, several body-recessed structures are firstly presented and studied. Comparing with the corresponding conventional bottom gate TFT, the local-thinned-body structure device with the smart body tie has many advantages including the lower sub-threshold swing, the higher current turn on/off ratio and the less DIBL
Keywords
thin film transistors; body-recessed structures; bottom gate thin-film transistor; local-thinned-body structure device; polysilicon thin-film transistor; smart body tie; Active matrix liquid crystal displays; Body regions; Driver circuits; Impact ionization; Parasitic capacitance; Semiconductor films; Silicon; Switches; Switching circuits; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2006 25th International Conference on
Conference_Location
Belgrade
Print_ISBN
1-4244-0117-8
Type
conf
DOI
10.1109/ICMEL.2006.1650970
Filename
1650970
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