Title :
Electrical transport properties of ion beam synthesized nickel silicide layers by MEVVA implantation
Author :
Wong, S.P. ; Zhang, X.W. ; Zhang, F. ; Cheung, W.Y.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, China
Abstract :
Nickel disilicide layers were synthesized by nickel ion implantation into silicon substrates using a metal vapor vacuum arc (MEVVA) ion source. The implantation was performed at an extraction voltage of 65 kV, with nominal ion doses ranging from 4×1017 cm-2 to 8×1017 cm-2 at various beam current densities ranging from 13 μA/cm2 to 52 μA/cm2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties
Keywords :
Hall mobility; Rutherford backscattering; X-ray diffraction; electrical resistivity; elemental semiconductors; ion implantation; nickel; nickel compounds; semiconductor-metal boundaries; silicon; 30 to 400 K; 65 kV; Hall effect; Hall mobility; MEVVA implantation; Rutherford backscattering spectrometry; Si:N-NiSi2; annealed samples; beam current densities; disilicide layers; electrical resistivity; electrical transport; extraction voltage; ion beam synthesized nickel silicide layers; ion doses; metal vapor vacuum arc ion source; nickel ion implantation; sheet resistivity; silicon substrates; temperature dependence; two-band model; x-ray diffraction; Annealing; Current density; Hall effect; Ion beams; Ion implantation; Ion sources; Nickel; Silicon; Vacuum arcs; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981524
