Electrical transport properties of ion beam synthesized nickel silicide layers by MEVVA implantation

Nickel disilicide layers were synthesized by nickel ion implantation into silicon substrates using a metal vapor vacuum arc (MEVVA) ion source. The implantation was performed at an extraction voltage of 65 kV, with nominal ion doses ranging from 4×10¹⁷ cm^-2 to 8×10¹⁷ cm^-2 at various beam current densities ranging from 13 μA/cm² to 52 μA/cm². Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties