Title :
Enhanced hole and interface trap generation in plasma damaged bulk and SOI MOSFETs under total dose irradiation
Author :
Yue, Jerry ; Sinha, Shankar
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Abstract :
Plasma damaged NMOS devices, fabricated on bulk and SOI wafers, were subjected to X-ray total dose irradiation. Prior to total dose irradiation, the differences in threshold voltage and subthreshold slope between the control and plasma damaged devices were very small. However, after total dose irradiation to 1 Mrad (SiO2), it became obvious that the plasma damaged devices have a significantly higher density of both oxide-trap charge and interface-trap charge. This result is different from the traditional hot-carrier or Fowler-Nordheim (F-N) stress of plasma damaged devices, where enhanced hole trapping is less pronounced
Keywords :
MOSFET; X-ray effects; dielectric thin films; hole traps; interface states; plasma materials processing; semiconductor device testing; silicon-on-insulator; surface charging; surface treatment; 1 Mrad; Fowler-Nordheim stress; SOI wafers; Si; SiO2-Si; X-ray total dose irradiation; bulk wafers; control devices; enhanced hole trapping; hole trap generation; hot-carrier stress; interface trap generation; interface-trap charge; oxide-trap charge; plasma damaged NMOS devices; plasma damaged SOI MOSFETs; plasma damaged bulk MOSFETs; plasma damaged devices; subthreshold slope; threshold voltage; total dose irradiation; Electron traps; MOS devices; MOSFETs; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma x-ray sources; Stress;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725565
