Schottky barrier height inhomogeneities of nickel mono-silicide/n-Si contact studied by I-V-T technique

Author

Jiang, Yu-Long ; Tian, Yun ; Ru, Guo-Ping ; Han, Yong-Zhao ; Lu, Fang ; Li, Bing-Zong

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

Volume

1

fYear

2001

fDate

2001

Firstpage

505

Abstract

The current-voltage (I-V) characteristics of nickel mono-silicide/n-Si Schottky diodes fabricated at different temperature and measured over a temperature range of 78 to 299 K have been interpreted on the basis of thermionic emission (TE) across an inhomogeneous Schottky contact. The experiment shows that the apparent barrier height φ_ap-1/T plot is a straight line within the whole experimental temperature for samples annealed at temperature ranging from 500°C to 600°C, however, for other samples annealed at temperature below 500°C and above 600°C the φ_ap-1/T Plots become more complicated. The linear case shows the Schottky barrier height inhomogeneities (SBHI) obeys single Gaussian distribution

Keywords

Gaussian distribution; Schottky barriers; Schottky diodes; characteristics measurement; elemental semiconductors; nickel compounds; semiconductor device measurement; silicon; 500 to 600 degC; 78 to 299 K; I-V-T technique; NiSi-Si; Schottky barrier height inhomogeneities; Schottky diodes; apparent barrier height; current-voltage characteristics; inhomogeneous Schottky contact; single Gaussian distribution; thermionic emission; Annealing; Current measurement; Gaussian distribution; Nickel; Schottky barriers; Schottky diodes; Tellurium; Temperature distribution; Temperature measurement; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981528

Filename

981528