Title :
Nucleation of CoSi2 and MnSi1.7 in the Co/Mn/Si ternary system
Author :
Detavernier, C. ; Van Meirhaeghe, R.L. ; Qu, Xin-Ping ; Ru, Guo-Ping ; Zhu, Shi-Yang ; Li, Bing-Zong
Author_Institution :
Dept. of Solid State Sci., Univ. Gent, Belgium
Abstract :
Silicide formation is studied for the ternary Co-Mn-Si system. At low temperatures, a mixed Co1-xMnxSi silicide is formed. It is found that the nucleation temperature of the Si-rich phases is increased by alloying: the nucleation temperature of CoSi2 is increased by the presence of a small amount of Mn, while the nucleation temperature of MnSi1.7 is increased in the presence of a small amount of Co. The nuclei could be observed using optical microscopy and atomic force microscopy. The influence of alloying on the nucleation of CoSi2 and MnSi1.7 is explained based on the effect of entropy of mixing
Keywords :
atomic force microscopy; chemical interdiffusion; cobalt; cobalt compounds; elemental semiconductors; entropy; heat of mixing; manganese; manganese compounds; nucleation; optical microscopy; semiconductor-metal boundaries; silicon; Co-Mn-Si; Co/Mn/Si ternary system; Co1-xMnxSi; CoSi2; MnSi1.7; Si-rich phases; alloying; atomic force microscopy; entropy; mixed Co1-xMnxSi silicide; mixing; nucleation temperature; optical microscopy; silicide formation; Alloying; Atom optics; Atomic force microscopy; Control systems; Entropy; Optical microscopy; Rapid thermal annealing; Silicides; Temperature; X-ray scattering;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981529
