Digital, analog, and mixed signal IC and system-on-chip of dual carrier field effect transistor and three dimensional field effect transistor

Author

Huang, C. ; Yang, Y.H. ; Huang, D.H.

Author_Institution

China Aerosp. Corp., Beijing, China

Volume

1

fYear

2001

fDate

2001

Firstpage

517

Abstract

Theoretical studies of digital, analog and mixed signal ICs and systems-on-a-chip using dual carrier field effect transistors and three dimensional field effect transistors are presented. It is shown that the effective channel length of dual carrier field effect transistors and three dimensional field effect transistors can be designed and fabricated to have effective channel length of 5-20 nm by mature semiconductor technology for line widths greater than 130 nm

Keywords

field effect analogue integrated circuits; field effect digital integrated circuits; field effect transistors; integrated circuit design; integrated circuit modelling; mixed analogue-digital integrated circuits; 130 nm; 3D field effect transistor; 5 to 20 nm; analog IC; digital IC; dual carrier field effect transistor; effective channel length; line widths; mixed signal IC; semiconductor technology; system-on-chip; Analog integrated circuits; Digital integrated circuits; FET integrated circuits; Germanium silicon alloys; MOSFETs; Microwave transistors; Resistors; Ring oscillators; Silicon germanium; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981531

Filename

981531