Title :
Low cost and high performance BiCMOS processes: a comparison
Author :
Klose, H. ; Meister, T. ; Hoffmann, B. ; Pfäffel, B. ; Weger, P. ; Maier, I.
Author_Institution :
Siemens AG, Munich, West Germany
Abstract :
A modular 1.2-μm BiCMOS process which can be used to realize either low-cost or high-performance bipolar devices within a CMOS environment is discussed. process complexity, electrical data, and circuit performance are compared for different circuit applications. It is shown that by the high-performance process mixed CMOS/ECL (emitter-coupled-logic) circuits with gate delays as low as 65 ps and data rates above 10 Gb/s can be realized
Keywords :
BIMOS integrated circuits; digital integrated circuits; integrated circuit technology; 1.2 micron; 10 Gbit/s; 65 ps; BiCMOS processes; circuit performance; data rates; electrical data; emitter-coupled-logic; gate delays; high performance BiCMOS process; high-performance bipolar devices; low cost BiCMOS process; low cost bipolar devices; mixed CMOS/ECL; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Circuit optimization; Costs; Delay; Latches; Substrates; Threshold voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69486
