CVD SiGe(C) epitaxial growth and its application to MOS devices

Author

Murota, Junichi ; Sakuraba, Masao ; Matsuura, Takashi

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

Volume

1

fYear

2001

fDate

2001

Firstpage

525

Abstract

By ultraclean low-pressure CVD using SiH₄ and GeH₄ gases, epitaxial growth of Si/Si_1-xGe_x/Si heterostructures with atomically flat surfaces and interfaces on Si(100) is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH₃, B₂H₆, or SiH₃CH₃ addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si_1-xGe_x on the source/drain regions

Keywords

Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor doping; semiconductor materials; silicon; vapour phase epitaxial growth; Si-Si_1-xGe_x-Si; atomically flat surfaces; deposition rate; epitaxial growth; in-situ doping characteristics; modified Langmuir-type adsorption; reactant gas adsorption/reaction; selective epitaxy; source/drain regions.MOS devices; ultraclean low-pressure CVD; ultrasmall MOSFETs; Atomic layer deposition; Epitaxial growth; Fabrication; Gases; Impurities; MOS devices; MOSFETs; Substrates; Surface cleaning; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981533

Filename

981533