Title :
Reliability characterization of process charging impact on thin gate oxide
Author :
Lee, Y.-H. ; Wu, K. ; Sery, G. ; Miekle, N. ; Lin, W.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Process charging effects in sub-micron p- and nMOSFETs with 32 Å oxide are investigated using gate current, stepping JT, ramp voltage, hot carrier and bias-temperature stress techniques. A failure criterion for determination of proper gate oxide reliability is proposed
Keywords :
MOSFET; electric current; failure analysis; hot carriers; semiconductor device reliability; semiconductor device testing; thermal stresses; 32 angstrom; Si; SiO2-Si; bias-temperature stress; failure criterion; gate current stress; gate oxide reliability; hot carrier stress; nMOSFETs; pMOSFETs; process charging effects; process charging impact; ramp voltage stress; reliability characterization; stepping JT stress; thin gate oxide; Circuit testing; Diodes; Etching; Hot carriers; MOSFETs; Plasma applications; Sputtering; Stress; Voltage; Wafer bonding;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725569
