DocumentCode
2207124
Title
A novel salicide body-contacted structure for partially depleted SOI nMOSFETs
Author
Yunlong, Liu ; Xinyu, Liu ; Zhiyong, Zhang ; He, Qian
Author_Institution
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Volume
1
fYear
2001
fDate
2001
Firstpage
531
Abstract
A novel salicide body-contacted structure compatible with bulk silicon process is presented in this paper for partially depleted SOI nMOSFETs. Simulation results show that the structure can eliminate the kink effect effectively and the drain breakdown voltage is improved considerably
Keywords
MOSFET; elemental semiconductors; semiconductor device breakdown; semiconductor device reliability; silicon; silicon-on-insulator; Si; bulk silicon process; drain breakdown voltage; kink effect; partially depleted SOI nMOSFETs; salicide body-contacted structure; Cobalt; Etching; Impurities; MOS devices; MOSFET circuits; Resists; Schottky barriers; Semiconductor films; Silicides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981534
Filename
981534
Link To Document