Asymmetric gate (AG) FET: a novel sub-micron MOS device structure with excellent performance

Author

Yang, Shengqi ; He, Jin ; Huang, Ru ; Zhang, Xing

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

1

fYear

2001

fDate

2001

Firstpage

543

Abstract

A novel field effect transistor (FET), asymmetric gate (AG) FET, is proposed and its excellent performance has been demonstrated numerically in this paper. Compared with the conventional MOSFET, the AGFET benefits from the special design of the gate oxide, which is divided into two regions, with one region at the source side thicker than that at the drain side. Two-dimensional (2-D) numerical simulations have proved that, in the novel structure, short-channel effects (SCE) can be greatly suppressed via channel being screened from the drain potential variations, while a significant velocity overshoot is achieved resulting in more drive current. It has shown that the AGFET will be one of the promising structures in design of sub-micron devices

Keywords

field effect transistors; semiconductor device models; 2D numerical simulation; AGFET; asymmetric gate FET; drain potential variations; drive current; gate oxide design; gate oxide thickness; short-channel effect suppression; sub-micron MOS device structure; sub-micron devices; velocity overshoot; Doping profiles; Electrons; FETs; Helium; Hot carrier effects; Implants; MOS devices; MOSFET circuits; Silicon compounds; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981537

Filename

981537