Experimental verification of the principle of operation of ring oscillators of Si complementary vertical dual carrier field effect transistors

Author

Xu, Y.Z. ; Tang, Z.M. ; Chen, L. ; Li, Z.S. ; Li, Y.B. ; Wu, C.L. ; Xu, P. ; Yang, Y.H. ; Huang, C. ; Huang, D.H.

Author_Institution

Beijing Inst. of Microelectron., China

Volume

1

fYear

2001

fDate

2001

Firstpage

547

Abstract

Theoretical studies of switching and analog performance of 0.6 volt 20 nm effective channel length Si ASIC of dual carrier field effect transistor and three dimensional field effect transistors will be presented. It will be shown that these field effect transistors can be fabricated by using mature semiconductor technology for linewidth greater than 130 nm

Keywords

field effect transistors; semiconductor device models; silicon; 0.6 V; 130 nm; 20 nm; Si; Si ASIC; Si complementary vertical dual carrier field effect transistors; analog performance; effective channel length; mature semiconductor technology; ring oscillators; switching; three dimensional field effect transistors; Application specific integrated circuits; Flip-flops; Microwave FETs; Microwave technology; Microwave transistors; Millimeter wave technology; Millimeter wave transistors; Ring oscillators; Signal processing; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981538

Filename

981538