Title :
Experimental verification of the principle of operation of ring oscillators of Si complementary vertical dual carrier field effect transistors
Author :
Xu, Y.Z. ; Tang, Z.M. ; Chen, L. ; Li, Z.S. ; Li, Y.B. ; Wu, C.L. ; Xu, P. ; Yang, Y.H. ; Huang, C. ; Huang, D.H.
Author_Institution :
Beijing Inst. of Microelectron., China
Abstract :
Theoretical studies of switching and analog performance of 0.6 volt 20 nm effective channel length Si ASIC of dual carrier field effect transistor and three dimensional field effect transistors will be presented. It will be shown that these field effect transistors can be fabricated by using mature semiconductor technology for linewidth greater than 130 nm
Keywords :
field effect transistors; semiconductor device models; silicon; 0.6 V; 130 nm; 20 nm; Si; Si ASIC; Si complementary vertical dual carrier field effect transistors; analog performance; effective channel length; mature semiconductor technology; ring oscillators; switching; three dimensional field effect transistors; Application specific integrated circuits; Flip-flops; Microwave FETs; Microwave technology; Microwave transistors; Millimeter wave technology; Millimeter wave transistors; Ring oscillators; Signal processing; Voltage-controlled oscillators;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981538
