Experimental verification of the principle of operation of Si and SiGe resistor load flip-flop and Si resistor load ring oscillator of n channel vertical dual carrier field effect transistor

Author

Li, G.H. ; Yan, F.Z. ; Han, D.J. ; Ji, C.Z. ; Zou, D.S. ; Xu, P. ; Yang, Y.H. ; Huang, C. ; Huang, D.H.

Author_Institution

Beijing Normal Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

551

Abstract

The principle of operation of Si and SiGe resistor load flip flops and Si resistor load ring oscillators of n channel vertical dual carrier field effect transistors are reviewed. Measured data from experimental verification of the principle of operation is presented

Keywords

Ge-Si alloys; elemental semiconductors; field effect transistors; flip-flops; oscillators; resistors; semiconductor device testing; semiconductor materials; silicon; Si; Si VDCFET resistor load flip-flop; Si VDCFET resistor load ring oscillator; Si resistor load flip-flop; Si resistor load ring oscillator; SiGe; SiGe VDCFET resistor load flip-flop; SiGe resistor load flip-flop; n-channel vertical dual carrier field effect transistor; operation verification; Circuits; FETs; Flip-flops; Germanium silicon alloys; Millimeter wave technology; Propagation delay; Resistors; Ring oscillators; Signal processing; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981539

Filename

981539