Impact of etcher chamber design on plasma induced device damage for advanced oxide etching

Author

Tao, H.J. ; Tsai, C.S. ; Lin, B.L. ; Su, C.W. ; Lin, S.P. ; Huang, Y.C. ; Sun, S.C.

Author_Institution

Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan

fYear

1998

fDate

4-5 Jun 1998

Firstpage

60

Lastpage

63

Abstract

The effect of oxide etcher chamber design on plasma induced damage is investigated by antenna test structures associated with optical emission spectroscopy. It is found that the magnetically-enhanced RIE (MERIE) type etcher may have less plasma damage than inductive type etchers under certain conditions. The experimental data also suggests that the chamber design for a high density plasma etcher has a significant impact on the plasma induced damage and the damage level can be minimized by choosing a different etching chemistry. From the spectroscopic data, we also conclude that plasma induced UV radiation has an insignificant contribution compared to charging damage

Keywords

design engineering; dielectric thin films; integrated circuit testing; integrated circuit yield; plasma materials processing; sputter etching; surface charging; ultraviolet radiation effects; MERIE type etcher; SiO₂; antenna test structures; charging damage; etcher chamber design; etching chemistry; high density plasma etcher; inductive type etchers; magnetically-enhanced RIE; optical emission spectroscopy; oxide etcher chamber design; oxide etching; plasma damage; plasma induced UV radiation; plasma induced damage; plasma induced damage level minimization; plasma induced device damage; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Plasma temperature; Spectroscopy; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

0-9651577-2-5

Type

conf

DOI

10.1109/PPID.1998.725574

Filename

725574