Title :
Design and simulation of SiGe channel SOI BMHMT
Author :
Jing, Wang ; Shu-Rong, Li ; Wei-lian, Guo ; Yun-guang, Zheng
Author_Institution :
Microelectron. Dept., Tianjin Univ., China
Abstract :
We address the integrated circuit, adopting SOI (silicon on insulator) structure with SiGe channel BMHMT (Bi-MOS hybrid-mode transistor). It has dynamic threshold voltage and is fit for working at low supply voltage conditions. We have performed the process and device simulation of SiGe channel SOI BMHMT and made comparison with SiGe channel SOI MOSFET and SOI MOSFET. Simulation results show that in terms of p-channel and n-channel device, the driving capabilities of SiGe channel SOI BMHMT are obviously higher than those of SiGe channel SOI MOSFET and SOT MOSFET and the improvement on n-channel device is more obvious
Keywords :
BIMOS integrated circuits; Ge-Si alloys; MOSFET; semiconductor device models; silicon-on-insulator; Bi-MOS hybrid-mode transistor; SOI BMHMT; SiGe; SiGe channel; SiGe channel SOI MOSFET; device simulation; driving capabilities; dynamic threshold voltage; integrated circuit; low supply voltage conditions; n-channel; p-channel; process simulation; Bipolar transistors; Doping profiles; Germanium silicon alloys; Low voltage; MOSFET circuits; Scattering; Silicon germanium; Silicon on insulator technology; Substrates; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981541
