Title :
Charging damage evaluation in 0.25~0.3 μm polycide gate etching processes
Author :
Sheu, Bor-Ru ; Wu, Kun-Hsu ; Lin, Geeng-Lih ; Jeng, Erik
Author_Institution :
Vanguard Int. Semicond. Corp., Hsinchu, Taiwan
Abstract :
Charging damage evaluation of 0.25-0.3 μm polycide gate etching processes in four commercial polycide etch process systems for 200 mm wafers is performed with time-to-breakdown (Tbd), charge-to-breakdown (Qbd), and initial-electron-trapping-rate (IETR, dV/dt) measurements using metal-oxide-semiconductor (MOS) capacitors and with flatband-voltage-shift (ΔVfb) measurement of metal-nitride-oxide-semiconductor (MNOS) capacitor test structures. All gate etching processes are optimized for 0.25~0.3 μm polycide gate patterning and are found to have minimal plasma damage. The sensitivity and limitations of these measurement methods are demonstrated in the evaluation of the charging characteristics of these gate etching processes
Keywords :
MOS capacitors; electric breakdown; electron traps; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; plasma materials processing; sputter etching; surface charging; 0.25 to 0.3 micron; 200 mm; MNOS capacitor test structures; MOS capacitors; Si; Si3N4-SiO2-Si; SiO2-Si; charge-to-breakdown measurements; charging characteristics; charging damage; flatband-voltage-shift measurement; gate etching processes; initial-electron-trapping-rate measurements; measurement sensitivity; metal-nitride-oxide-semiconductor capacitor test structures; metal-oxide-semiconductor capacitors; plasma damage; polycide etch process systems; polycide gate etching; polycide gate etching processes; polycide gate patterning; time-to-breakdown measurements; wafer size; Design for quality; Electrodes; Etching; MOS capacitors; Plasma applications; Plasma displays; Random access memory; Silicon compounds; Stress; Testing;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725578
