A Modified EKV PDSOI MOSFETs Model

Author

Alvarado, J. ; Cerdeira, A. ; Kilshytska, V. ; Flandre, D.

Author_Institution

Solid-State Electron. Sect., CINVESTAV-IPN, Mexico City

fYear

0

fDate

0-0 0

Firstpage

459

Lastpage

462

Abstract

The modeling of MOSFET I-V curves for distortion analysis in analog circuit design requires compact models for both long and short channel devices, which describe the transistor behavior with high precision based on the physics of the device. In the present paper, to achieve such precision, modifications of the EKV model equations are presented, while using the same parameters. A comparison for PD SOI MOSFETs of different channel lengths shows a very good agreement between experimental and modeled data. This enables the capability for studying, at circuit CAD level, the nonlinearity present in these devices thanks to the accuracy obtained in high derivatives of the drain current by our modified EKV model

Keywords

MOSFET; circuit CAD; semiconductor device models; silicon-on-insulator; EKV model equations; PD SOI MOSFET; channel lengths; circuit CAD level; device nonlinearity; drain current; Analog circuits; Circuit analysis; Current-voltage characteristics; Data mining; Interpolation; MOSFETs; Nonlinear equations; Parameter extraction; Physics; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1651000

Filename

1651000