A Modified EKV PDSOI MOSFETs Model

The modeling of MOSFET I-V curves for distortion analysis in analog circuit design requires compact models for both long and short channel devices, which describe the transistor behavior with high precision based on the physics of the device. In the present paper, to achieve such precision, modifications of the EKV model equations are presented, while using the same parameters. A comparison for PD SOI MOSFETs of different channel lengths shows a very good agreement between experimental and modeled data. This enables the capability for studying, at circuit CAD level, the nonlinearity present in these devices thanks to the accuracy obtained in high derivatives of the drain current by our modified EKV model