A Simple Polysilicon Thin-Film Transistor SPICE Model

Author

Pappas, I. ; Hatzopoulos, A.T. ; Tassis, D.H. ; Arpatzanis, N. ; Siskos, S. ; Hatzopoulos, A.A. ; Dimitriadis, C.A. ; Kamarinos, G.

Author_Institution

Dept. of Phys., Aristotle Univ., Thessaloniki

fYear

0

fDate

0-0 0

Firstpage

480

Lastpage

483

Abstract

A simple current-voltage model for polysilicon thin-film transistors (TFTs) is proposed, including the sixth-order polynomial function coefficients fitted to the effective mobility versus gate voltage data, the channel length modulation and the impact ionization effect. The model possesses continuity of current in the transfer characteristics from weak to strong inversion and in the output characteristics throughout the linear and saturation regions of operation. It has been applied in a number of long and short channel TFTs and the statistical distributions of the model parameters involved have been derived. The new model was adapted in the simulation program AIM-SPICE, with the extracted parameters used as input parameters of the new polysilicon TFT model

Keywords

SPICE; polynomial approximation; semiconductor device models; silicon compounds; thin film transistors; SPICE model; channel length modulation; current-voltage model; effective mobility; gate voltage data; impact ionization effect; polynomial function coefficients; polysilicon thin film transistor; statistical distributions; transfer characteristics; Circuit simulation; Grain boundaries; Impact ionization; Integrated circuit modeling; Integrated circuit technology; Polynomials; SPICE; Statistical distributions; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1651006

Filename

1651006