Single-ended HEMT RF/microwave frequency doubler design using reflector networks

Author

Thomas, Donald G., Jr. ; Branner, G.R.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA

Volume

2

fYear

1995

fDate

13-16 Aug 1995

Firstpage

1014

Abstract

Microwave and RF frequency multipliers are widely used in a large number of communications, radar, civilian and military systems. This paper presents the development of active doublers operating in the S and C frequency bands. These devices are unique in that HEMTs are employed with specialized embedding networks to provide optimized performance. Conversion gains of approximately 7 dB have been attained for narrowband designs (5% bandwidth), 5 dB for medium bandwidth designs (15%), and 4 dB for wide bandwidth designs (35%). The fundamental and third harmonic rejection is approximately 40 dBc for the narrowband designs and greater than 50 dBc for the medium and wideband designs

Keywords

HEMT circuits; UHF frequency convertors; frequency multipliers; microwave frequency convertors; 4 to 7 dB; C-band; HEMT frequency doubler design; RF frequency doubler; S-band; SHF; UHF; active doublers; embedding networks; frequency multipliers; microwave frequency doubler; narrowband design; reflector networks; single-ended frequency doubler; wideband design; Bandwidth; HEMTs; Microwave communication; Microwave devices; Microwave frequencies; Military communication; Narrowband; Radar; Radio frequency; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2972-4

Type

conf

DOI

10.1109/MWSCAS.1995.510265

Filename

510265