SiGe/Si HBTs with current gain of negative temperature dependence

Author

Deshu, Zou ; Chen, Xu ; Jianxin, Chen ; Chen, Shi ; Du Jinyu ; Jun, Deng ; Li, Zhang ; GuangDi, Shen

Author_Institution

Beijing Optoelectronic Technol. Lab., Beijing Polytech. Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

607

Abstract

In this paper, we analysis the basic principle of SiGe/Si HBTs, design and fabricate power transistors with current gain of negative temperature dependence. The current gain of such transistors decreases from 33 to 20, when the temperature rises from 300 K to 385 K, at the case the quiescent current, I_cm, is 200 mA and V_ce is 2 V. These power HBTs are to be used in medium power amplifiers

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor materials; silicon; 2 V; 200 mA; 300 to 385 K; SiGe-Si; SiGe/Si HBTs; current gain; design; medium power amplifiers; negative temperature dependence; power HBTs; power transistors; quiescent current; Conducting materials; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Photonic band gap; Power amplifiers; Semiconductor materials; Silicon germanium; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981552

Filename

981552