Title :
SiGe anode lateral isolated-gate heterojunction bipolar transistor
Author :
Li, Ping ; You, Mengsi ; Su, Yajuan ; Li, Xuening
Author_Institution :
Res. Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel SiGe anode lateral insulated-gate heterojunction bipolar transistor (SiGe-A-LIGHBT), which is suitable for power IC, is verified in this paper. The comparison among the fabricated SiGe-A-LIGHBT, SINFET and LIGBT indicates that the SiGe-A-LIGHBT has the highest speed, toff=40 ns, and the best trade-off between the power dissipation and the speed
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; 40 ns; SiGe; SiGe anode lateral isolated-gate heterojunction bipolar transistor; highest speed; power dissipation; Anodes; Germanium silicon alloys; Heterojunction bipolar transistors; Insulation; Isolation technology; Microelectronics; Photonic band gap; Power integrated circuits; Silicon germanium; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981554
