• DocumentCode
    2207665
  • Title

    SiGe anode lateral isolated-gate heterojunction bipolar transistor

  • Author

    Li, Ping ; You, Mengsi ; Su, Yajuan ; Li, Xuening

  • Author_Institution
    Res. Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    612
  • Abstract
    A novel SiGe anode lateral insulated-gate heterojunction bipolar transistor (SiGe-A-LIGHBT), which is suitable for power IC, is verified in this paper. The comparison among the fabricated SiGe-A-LIGHBT, SINFET and LIGBT indicates that the SiGe-A-LIGHBT has the highest speed, toff=40 ns, and the best trade-off between the power dissipation and the speed
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; 40 ns; SiGe; SiGe anode lateral isolated-gate heterojunction bipolar transistor; highest speed; power dissipation; Anodes; Germanium silicon alloys; Heterojunction bipolar transistors; Insulation; Isolation technology; Microelectronics; Photonic band gap; Power integrated circuits; Silicon germanium; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981554
  • Filename
    981554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2207665