Title :
A study of SiGe/Si heterostructure implanted by oxygen and hydrogen
Author :
An, Zhenghua ; Zhang, Miao ; Men, Chuanling ; Liu, Weili ; Li, Kaicheng ; Lin, Chenglu
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
A 100 nm SiGe film with uniform Germanium composition was grown on Si(100) substrate using MBE system without graded SiGe buffer layer. Then the samples were implanted by oxygen ions at an energy of 45 keV and a dose of 3×1017/cm2, and annealed for 5 hours at 1250°C in flowing Ar atmosphere with 5% O2 with a 100 nm oxide protective layer. After that the buried oxide layer was formed, and Ge redistribution was found. Also, Hydrogen was implanted into SiGe at the energy of 62 keV and the dose of 6×1016/cm2 to perform a blistering study, which suggested the feasibility of H-induced layer splitting in SiGe layer
Keywords :
Ge-Si alloys; annealing; buried layers; elemental semiconductors; hydrogen; ion implantation; oxidation; oxygen; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; silicon; 100 nm; 1250 C; 45 keV; 5 h; 62 keV; Ge redistribution; H-induced layer splitting; MBE; Si; SiGe film; SiGe on insulator; SiGe-Si:O,H; SiGe/Si heterostructure; annealing; blistering study; buried oxide layer; dose; flowing At atmosphere; hydrogen; oxide protective layer; oxygen; uniform composition; Annealing; Argon; Atmosphere; Buffer layers; Germanium silicon alloys; Hydrogen; Molecular beam epitaxial growth; Protection; Silicon germanium; Substrates;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981555
