DocumentCode :
2207681
Title :
Dispersion Relation for Two-Valley QuasiHydrodynamic Models in SCWs Propagation in n-GaAs Thin Films
Author :
Garcia-B, Abel ; Grimalsky, Volodymyr ; Gutierrez-D, E. ; Koshevaya, S.
Author_Institution :
Dept. of Electron., INAOE, Puebla
fYear :
0
fDate :
0-0 0
Firstpage :
507
Lastpage :
510
Abstract :
The space charge wave propagation in thin n-GaAs films has been considered within a framework of different quasi-hydrodynamic balance models. A comparative study of the dependencies k(omega) of a complex longitudinal wave number on frequency, which are obtained from different balance equation models are presented and discussed. It has been demonstrated that the model where the balance equations are written for different valleys directly seems to be the most correct. The balance models based on averaging over the valleys may lead to incorrect results in the case of long distances of propagation of space charge waves. When the thermal conductivity term is taken into account and the length of the system is short, the averaged balance models can get satisfactory results
Keywords :
III-V semiconductors; dispersion relations; gallium arsenide; hydrodynamic model (elementary particles); semiconductor thin films; space charge waves; GaAs; SCW propagation; complex longitudinal wave; dispersion relation; long distance propagation; n-GaAs thin films; quasihydrodynamic balance models; space charge wave propagation; thermal conductivity; Charge carrier density; Differential equations; Dispersion; Electrons; Frequency; Gallium arsenide; Hydrodynamics; Space charge; Thermal conductivity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
Type :
conf
DOI :
10.1109/ICMEL.2006.1651013
Filename :
1651013
Link To Document :
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