Title :
Diffusion-Drift Model of Fully Depleted SOI MOSFET
Author :
Zebrev, G.I. ; Gorbunov, M.S.
Author_Institution :
Dept. of Microelectron., Moscow Eng. Phys. Inst.
Abstract :
Based on explicit analytical solution of drain current continuity equation a new compact physical model for fully depleted SOI MOSFET has been proposed. The model provides continuous description of I-V characteristics in all transistor operation modes
Keywords :
MOSFET; diffusion barriers; silicon-on-insulator; I-V characteristics; diffusion-drift model; drain current continuity equation; fully depleted SOI MOSFET; transistor operation; Electrostatics; Equations; MOSFET circuits; Microelectronics; Neural networks; Physics; Power engineering and energy; Semiconductor device modeling; Silicon on insulator technology; Voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651014
