Non ideal current in SiGe/Si HBT

Author

Xu, Chen ; Zou, Deshu ; Chen, Jianxin ; Shi, Chen ; Deng, Jun ; Gao, Guo ; Shen, Guangdi

Author_Institution

Optoelectron. Technol. Lab., Beijing Polytech. Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

631

Abstract

The non-ideal current in the I_b and I_c of the SiGe/Si HBT were studied. At low temperature it showed tunnel characteristics. From C-V and double crystal X-ray diffraction measurements, it was confirmed that this phenomena was related to the crystal quality in the base, emitter and their interface, but not related to the SiO-Si interface. The non-ideal current in I_c cannot be explained by the conventional drift-diffusion theory and is believed to be relevant to electrons tunneling from emitter or its depleted region to collector by means of an intermediate trap state in the base. However DLTS measurements shown that the phenomena have nothing to do with the deep levels in the emitter and collector

Keywords

Ge-Si alloys; X-ray diffraction; deep level transient spectroscopy; electron traps; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; tunnelling; DLTS; HBT; SiGe-Si; double crystal X-ray diffraction; intermediate trap state; nonideal current; tunnel characteristics; Capacitance-voltage characteristics; Consumer electronics; Doping; Educational institutions; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981559

Filename

981559