Title :
Low Frequency Noise and Fluctuations in Sub 0.1um Bulk and SOI CMOS Technologies
Author :
Ghibaudo, G. ; Jomaah, J.
Author_Institution :
IMEP Lab., ENSERG, Grenoble
Abstract :
A review of recent results on the low frequency noise in advanced Si-based CMOS devices is given. The modeling approaches such as the carrier number and the Hooge mobility fluctuations used for the diagnostic of the noise sources are presented and illustrated through experimental data obtained on modern SOI and Si bulk CMOS generations. For SOI devices fully-depleted MOSFET´s and double-gate structures are focused. The impact of the back gate voltage on the 1/f noise is analyzed. For Si bulk devices, a special emphasis is addressed to the role of gate leakage on both static and LF noise characteristics
Keywords :
1/f noise; CMOS integrated circuits; MIS devices; MOSFET; fluctuations; leakage currents; semiconductor device noise; silicon; silicon-on-insulator; 1/f noise; Hooge mobility fluctuations; SOI CMOS technology; Si-based CMOS device; back gate voltage; bulk CMOS technology; carrier number; double-gate structure; fully-depleted MOSFET; low frequency noise; noise source; CMOS technology; Circuit noise; Fluctuations; Frequency; Low-frequency noise; MOSFETs; Phase noise; Semiconductor device modeling; Silicon compounds; Voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651016
