Title :
Analysis of Surface Generation Mechanisms in MOS Capacitors
Author :
Kong, F. ; Tanner, P. ; Hold, L. ; Han, J. ; Dimitrijev, S.
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Nathan, Qld.
Abstract :
This paper demonstrates the extraction of MOS capacitor minority carrier generation lifetime and surface generation velocity from the measurement of deep-depletion capacitance transient. It is shown that the bulk generation lifetime, the lateral surface generation, and the surface generation under the gate can be separately determined by measuring test structures with different perimeter-to-area ratios
Keywords :
MOS capacitors; capacitance; minority carriers; MOS capacitors; bulk generation lifetime; deep-depletion capacitance transient; lateral surface generation; minority carrier generation lifetime; surface generation mechanism; surface generation velocity; Capacitance measurement; Dielectric constant; Lifetime estimation; MOS capacitors; Pulse generation; Pulse measurements; Silicon; Space charge; Transient analysis; Velocity measurement;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651017
