The properties of epitaxial pure germanium films on silicon substrate

Author

Ru, Yang ; Ke, Li ; Guohui, Li ; Changsi, Peng ; Yongkang, Li

Author_Institution

Key Lab. of Beam Technol., Beijing Normal Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

634

Abstract

To fabricate avalanche photodiodes with less multiplication noises based on germanium, the properties of epitaxial Ge films on silicon substrate are studied. Ge layers are grown directly on an Si substrate by using surfactant-mediated epitaxy (SME) in the molecular beam epitaxy (MBE) growth. Transmission electron microscopy (TEM) and double-crystal X-ray diffraction (XRD) are performed. From the results, we can obtained relaxed, pure and high quality Ge layers. The crystal quality of the sample with implanted p-n junction are better than that of the sample with epitaxial p-n junction. Hole mobility determined by Hall measurements reaches almost 300 cm²/Vs. Properties of sample with an implanted p-n junction are quite good. Reverse breakdown voltage is 50-100 V and forward-conducting voltage is 0.3-0.5 V

Keywords

X-ray diffraction; avalanche photodiodes; elemental semiconductors; germanium; hole mobility; molecular beam epitaxial growth; semiconductor epitaxial layers; silicon; substrates; transmission electron microscopy; 0.3 to 0.5 V; 50 to 100 V; APD fabrication; Ge-Si; Hall measurements; MBE growth; Si; Si substrate; TEM; XRD; avalanche photodiodes; crystal quality; double-crystal X-ray diffraction; forward-conducting voltage; hole mobility; implanted p-n junction; molecular beam epitaxy growth; pure Ge epitaxial films; reverse breakdown voltage; surfactant-mediated epitaxy; transmission electron microscopy; Avalanche photodiodes; Epitaxial growth; Germanium; Molecular beam epitaxial growth; P-n junctions; Semiconductor films; Silicon; Substrates; Transmission electron microscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981560

Filename

981560