SOI device and technology: modeling, characterization, and simulations

Author

An, Judy Xilin ; Sinha, Shankar P. ; Wei, Andy ; Pelella, Mario M. ; Kepler, Nick J.

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

643

Abstract

This paper reviews the applications of device modeling, characterization, and simulations of partially depleted (PD) SOI devices and technology for microprocessor designs. SOI-specific effects and characteristics, which make SOI different from bulk MOSFET, are discussed with underlying device physics and insights obtained from simulations using compact model and device simulator. Means for achieving the ultimate goal of SOI device and circuit designs, that is to maximize SOI performance while minimize undesirable effects, are also discussed in the paper

Keywords

MOSFET; leakage currents; semiconductor device models; silicon-on-insulator; temperature distribution; thermal analysis; transient analysis; DC device simulations; SOI technology; Si; compact model; device characterization; device modeling; device physics; floating body effects; microprocessor designs; partially depleted SOI devices; self-heating effect; transient leakage; Circuit optimization; Circuit simulation; MOS devices; MOSFET circuits; Microprocessors; Predictive models; Semiconductor device modeling; Spontaneous emission; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981562

Filename

981562