Long Range Statistical Lifetime Prediction of UltraThin SiO2 Oxides: Influence of Accelerated Ageing Methods and Extrapolation Models

A large database of time dependent dielectric breakdown has been obtained for 2.3 nm and 3.2 nm SiO₂ thin oxides. The reliability models used to qualify theses oxides, have been tested using an accurate experimental error evaluation. The experimental method used has been investigated and relaxation phenomena have been treated in this particular case. The area dependence has been checked for 2.3nm in order to confirm the validity of this law. The activation energies corresponding to the dominant degradation mechanisms have been extracted over a temperature range from 50degC to 125degC and these values have been discussed. The voltage extrapolation models have been compared for positive polarity on P and N type substrate. This study shows that a power voltage model is well predictive for both P substrate in inversion regime and N substrate in accumulation regime