Title :
Investigation of hot carrier effects in SOI nMOSFET´s operating in a Bi-MOS mode with mesa isolation
Author :
Huang, Ru ; Zhang, Xing ; He, Jin ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A comprehensive investigation of hot carrier effects in mesa-isolated SOI nMOSFET´s operating in the Bi-MOS mode (abbreviated as Bi-nMOSFET´s) is made in this paper for the first time. As a result of its unique hybrid operation mechanism, significant reduction of hot carrier induced maximum transconductance degradation and threshold voltage shift in the Bi-nMOSFET is observed in comparison with that in the conventional SOI nMOSFET´s. The improved HC degradation behaviors are analyzed. The post-stress base (body) current and stress body current in Bi-nMOSFET´s as a function of the stress time and stress drain voltage were evaluated as further proofs of the aging reasons
Keywords :
BIMOS integrated circuits; MOSFET; hot carriers; silicon-on-insulator; Bi-MOS mode with mesa isolation; SOI nMOSFET´s; hot carrier effects; maximum transconductance degradation; post-stress base current; post-stress body current; stress body current; stress drain voltage; stress time; threshold voltage shift; Aging; Degradation; Hot carrier effects; Hot carriers; MOSFET circuits; Semiconductor films; Silicon; Stress; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981565
