Title :
On "pure self-heating effect" of MOSFET in SOI
Author :
Taolei, Zheng ; Jinsheng, Luo ; Xing, Zhang
Author_Institution :
Inst. of Microelectron., Xi´´an Jiaotong Univ., China
Abstract :
The electrothermal simulation of high-voltage MOSFET in thin SOI for self-heating effects is performed by means of MIDICI, a commercial 2-D numerical simulator. By varying the thermal conductivity of the buried oxide, we can extract the self-heating effects merely from the great rise in thermal resistance of the substrate, which are defined as the pure self-heating effect. The pure self-heating in SOI MOSFET is also presented for universality of the concept
Keywords :
MOSFET; silicon-on-insulator; thermal conductivity; MIDICI; MOSFET in SOI; buried oxide; commercial 2-D numerical simulator; electrothermal simulation; pure self-heating effect; thermal conductivity; thermal resistance; Doping; Electric variables measurement; Electrothermal effects; MOSFET circuits; Microelectronics; Semiconductor films; Silicon on insulator technology; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981566
