DocumentCode :
2207965
Title :
A Novel Characterization Method for Thermal Thin-Film Properties Applied toPECVD Silicon Nitride
Author :
Beigelbeck, Roman ; Kohl, Franz ; Keplinger, Franz ; Kuntner, Jochen ; Jakoby, Bernhard
Author_Institution :
Austrian Acad. of Sci., Wiener Neustadt
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
938
Lastpage :
941
Abstract :
Design, simulation, and optimization of micromachined sensor devices often require accurate knowledge of thermal thin-film properties, e. g., for PECVD-Si3N4. These thermal parameters can differ considerably from those stated for bulk material and they are typically process-dependent. We developed a novel method to determine the thermal conductivity as well as the heat capacity of such thin-films based on a micromachined cantilever device. In this contribution, we describe a newly devised test device together with the associated extraction procedure and report on an experimental verification for a dielectric PECVD silicon nitride thin-film.
Keywords :
microsensors; plasma CVD; silicon compounds; thermal conductivity; thin film sensors; PECVD silicon nitride; SiN; cantilever device; heat capacity; micromachined sensor; thermal conductivity; thermal thin film properties; Conducting materials; Design optimization; Dielectric thin films; Semiconductor thin films; Sensor phenomena and characterization; Silicon; Thermal conductivity; Thermal sensors; Thin film devices; Thin film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1930-0395
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.4388557
Filename :
4388557
Link To Document :
بازگشت