DocumentCode :
2208005
Title :
Reduction of topography dependent charging with low electron temperature plasma
Author :
Kinoshita, Takashi ; McVittie, James P.
Author_Institution :
Lab. of Electron. & Inf. Technol., Kobe Steel Ltd., Hyogo, Japan
fYear :
1998
fDate :
4-5 Jun 1998
Firstpage :
172
Lastpage :
175
Abstract :
In simple terms, topography dependent charging (TDC) or electron shading results from the directionality difference between ions and electrons bombarding a surface with topography. In addition to directionality, the ion and electron energy distribution functions (IEDF and EEDF, respectively) also play important roles in charging by this mechanism. Experimentally, Fujiwara et al. (1995) reported that lowering electron temperature Te reduces TDC, as demonstrated by the notching effect. For the ions, the importance of the IEDF was implied early by the observed dependence of notching on bias voltage (Ogino et al., 1995) and frequency (Fujiwara et al., 1994). In terms of theory, the Stanford group (Kinoshita et al., 1996) followed by the Cal Tech group (Hwang et al., 1997) have developed TDC simulators which predict the effects of the IEDF on this form of charging. Using the former simulator with the addition of EEDF calculations, this paper gives a more detailed description of how increasing the low energy electron population reduces topography dependent charging
Keywords :
plasma materials processing; semiconductor process modelling; surface charging; surface topography; surface treatment; EEDF; EEDF calculations; IEDF; TDC simulators; bias frequency; bias voltage; electron directionality; electron energy distribution function; electron shading; electron temperature; ion directionality; ion energy distribution function; low electron temperature plasma; low energy electron population; notching effect; surface bombardment; surface charging; surface topography; topography dependent charging; Electrodes; Electrons; Plasma temperature; Radio frequency; Surface charging; Surface topography; Tellurium; Temperature dependence; Virtual colonoscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
Type :
conf
DOI :
10.1109/PPID.1998.725602
Filename :
725602
Link To Document :
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