Title :
Suppression of topography-dependent charging damage to MOS devices using pulse-time-modulated plasma
Author :
Noguchi, K. ; Ohtake, H. ; Samukawa, S. ; Horiuchi, T.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Sagamihara, Japan
Abstract :
Topography-dependent charging damage to MOS devices occurring during metal etching can be suppressed by using pulse-time-modulated plasma. The reliability of MOS devices fabricated using pulse-time-modulated plasma is investigated from the charge-to-breakdown and the threshold voltage as a function of the pulse interval and the antenna topography. We show that, with an increase in the interval of the microwave source power, the charging damage to the MOS devices is significantly reduced: the charging current is reduced to 1/5 at a pulse interval of 100 μsec
Keywords :
MOSFET; electric breakdown; plasma materials processing; plasma radiofrequency heating; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; sputter etching; surface charging; surface topography; 100 mus; MOS devices; NMOSFET; antenna topography; charge-to-breakdown; charging current; charging damage; metal etching; microwave source power interval; pulse interval; pulse-time-modulated plasma; reliability; threshold voltage; topography-dependent charging damage; topography-dependent charging damage suppression; Etching; MOS devices; National electric code; Plasma applications; Plasma devices; Plasma properties; Plasma sources; Plasma waves; Pulse modulation; Space vector pulse width modulation;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725603
