Title :
Total dose radiation experiments in CMOS/SOI 4 Kb SRAM
Author :
Yunlong, Liu ; Xinyu, Liu ; Chaohe, Hai ; Haifeng, Sun ; Zhengsheng, Han ; He, Qian
Author_Institution :
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Abstract :
This paper describes the total dose radiation performance of CMOS/SOI 4 Kb SRAMs fabricated in a radiation hardened partially depleted SOI CMOS technology. The SRAM adopts 1 K×4 architecture. It achieves a fast access time 30 ns and chip size 3.6 mm×3.84 mm. Memory functionality does well after a total dose irradiation up to 5×105 rad(Si) under 3 V power supply. This meets the needs in military and aerospace fields. It is the first time that the radiation effects on SOI VLSI were investigated in China
Keywords :
CMOS memory circuits; SRAM chips; VLSI; gamma-ray effects; military avionics; radiation hardening (electronics); silicon-on-insulator; space vehicle electronics; 3 V; 30 ns; 4 Kbit; CMOS SOI SRAM; VLSI; aerospace use; fast access time; function tests; gamma irradiation; memory functionality; military use; radiation hardened partially depleted technology; six-transistor memory cell; total dose radiation performance; CMOS technology; Circuits; Decoding; Fabrication; Isolation technology; Microelectronics; Power supplies; Radiation effects; Radiation hardening; Random access memory;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981569
