Title :
Effect of electron temperature and electron density on topography dependent charging (TDC) damage in inductively coupled plasma etching tool
Author :
Tokashiki, K. ; Araki, M. ; Nagase, M. ; Noguchi, K. ; Miyamoto, H. ; Horiuchi, T.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Sagamihara, Japan
Abstract :
We investigated the correlation between electron temperature, electron density and topography dependent charging (TDC) damage in an inductively coupled plasma (ICP) metal etching tool. TDC damage was evaluated by controlling both electron temperature and density. The primary result is that TDC damage depends more strongly on electron density than on electron temperature. This remarkable result suggests that TDC damage could be minimized by lowering plasma density to as low as 1010 cm-3, even if electron temperature is still high at around 4 eV or more
Keywords :
electron density; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; plasma density; plasma materials processing; sputter etching; surface charging; surface topography; 4 eV; ICP metal etching tool; TDC damage; TDC damage minimization; electron density; electron temperature; inductively coupled plasma etching tool; plasma density; topography dependent charging damage; Electrons; Etching; Plasma applications; Plasma density; Plasma devices; Plasma temperature; Probes; Surfaces; Tellurium; Temperature dependence;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725605
