Title :
Relationship between Intrinsic Breakdown Field and Bandgap of Materials
Author_Institution :
Jiangsu Coll. of Inf. Technol.
Abstract :
A universal expression for the relationship between intrinsic breakdown field and bandgap of both semiconductors and insulators is proposed, and a quantitative criterion for distinguishing between semiconductors and insulators is introduced for the first time
Keywords :
energy gap; insulators; semiconductor device breakdown; semiconductor materials; insulators; intrinsic breakdown field; materials bandgap; semiconductors; Bismuth; Composite materials; Electric breakdown; Insulation; Measurement errors; Photonic band gap; Semiconductor device breakdown; Semiconductor device doping; Semiconductor impurities; Semiconductor materials;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651032
