• DocumentCode
    2208187
  • Title

    Impact of line/hole-antenna connected to well on plasma induced charging damage [IC interconnects]

  • Author

    Matsunaga, Noriaki ; Honda, Kenji ; Yoshinari, Hitomi ; Shibata, Hideki

  • Author_Institution
    Lab. of Microelectron. Eng., Toshiba Corp., Yokohama, Japan
  • fYear
    1998
  • fDate
    4-5 Jun 1998
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    The impact of both a dummy line-antenna connected to a MOSFET well (line-ACe pattern) and a dummy hole-antenna connected to a MOSFET well (hole-ACe pattern) on plasma induced charging damage was studied. It was found that the line-ACe pattern was effective for reduction of the charging damage. Reducing the distance between the line-ACe pattern and a functional line connected to the gate was found to be key to production of a sufficiently large effect from the line-ACe pattern. Significant charging damage reduction was confirmed for the hole-ACe pattern and the line-ACe pattern. These results suggest that the charging damage reduction is due to well potential modulation, and that the hole-ACe pattern is one of the most promising methods for reducing the charging damage in damascene interconnection structures
  • Keywords
    MOS integrated circuits; MOSFET; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; plasma materials processing; sputter etching; surface charging; IC interconnects; MOSFET well; RIE patterning; Si; SiO2-Si; charging damage; charging damage reduction; damascene interconnection structures; dummy hole-antenna; dummy line-antenna; functional line; hole-ACe pattern; line-ACe pattern; plasma induced charging damage; Etching; Fingers; Laboratories; Large scale integration; MOSFET circuits; Microelectronics; Plasma applications; Plasma devices; Plasma measurements; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1998 3rd International Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-9651577-2-5
  • Type

    conf

  • DOI
    10.1109/PPID.1998.725608
  • Filename
    725608